SEOUL, South Korea / RankWire.AI / – Samsung Electronics introduced its innovative approach to next-generation memory and storage solutions for AI infrastructure at the 2026 OCP Global Summit. The event, held in San Jose, California, from October 12 to 15, showcased the company’s plans for three key technology areas: high-performance memory, Compute Express Link-based memory expansion, and advanced solid-state drives. Additionally, Samsung announced a joint CXL demonstration with Advanced Micro Devices. The new strategy aims to overcome memory limitations that hinder larger AI workloads.
Samsung’s approach centers on enhancing speed, scalability of memory, and data durability. The first pillar emphasizes high-performance memory, with the company presenting customized high-bandwidth memory and HBM5, its eighth-generation HBM. The second pillar employs CXL technology to extend memory capacity beyond what each server currently supports. The third focuses on data storage and management through next-generation enterprise SSDs and storage software. Samsung states that these three components work synergistically to improve overall AI system efficiency.
The company links this strategy to the increasing memory needs driven by AI agents and inference tasks, as larger models generate more data during inference that must be stored. Standard server designs often limit memory capacity per processor. Samsung proposes CXL as a solution to surpass these restrictions without overhauling entire systems. The company also highlighted key-value cache optimization, which enables AI models to reuse previously processed data rather than recomputing it.
Samsung and AMD showcase collaborative CXL memory expansion
At the summit, Samsung and AMD demonstrated a CXL-based memory expansion solution that allows processors to share memory resources and dynamically scale capacity across AI systems. Samsung confirmed that this solution has been validated in actual system environments. The two firms signed a memorandum of understanding in March 2026 to collaborate on next-generation AI memory and computing technologies. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss cooperation in memory and foundry sectors.
Samsung also showcased CMM-D, its CXL-enabled DRAM memory module, configured in a memory pooling setup. This configuration links multiple CXL memory units into a shared pool that different systems can access as needed. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfers. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers. Nvidia’s Groq 3 LPX system was also among the showcased products.
Early access to memory validation benefits partners
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, explained that expanding memory capacity and bandwidth is increasingly vital as AI models grow larger and inference demands intensify. He also mentioned that Samsung is enhancing co-design and technical validation with global partners from the early development stages. This approach aims to tailor memory products to meet customer system needs prior to commercial release.
Samsung’s MAX Lab facilitates this process by allowing customers to test memory and storage solutions under real AI workloads. This enables validation of technologies such as PIM and next-generation SSDs before they reach the market. Samsung participated in the summit as a Diamond Sponsor of the Open Compute Project event. This appearance follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. The company continues to emphasize memory capacity as a central factor in AI infrastructure performance.